Mitsubishi SiC diode inverter: power loss reduction of 18%
Time:2013-03-21
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Mitsubishi Electric trial out using SiC Schottky barrier diode (SBD) and silicon-channel type IGBT, output power of 300kW level inverter. The company said, "The light output power can drive the motor." Mitsubishi Electric inverter diodes by Si system from the original system to SiC SBD, the average power loss can reduce about 18%. By reducing power consumption, will help reduce the weight of the inverter, or reduce the heat to simplify the cooling body.
Mitsubishi Electric has been committed to developing SiC power devices, and the use of SiC power inverter components and other products. Inverter output power of such date, as tens of kW. This is the first successful trial more than 100kW of power inverter.
The development of the 300kW power level inverter consists of three modules. Power module is rated for 1200A, voltage is 1700V. To improve the output power, parallel a number of rated current of 75A, the system pressure to 1700V of SiC SBD. It consists in the high-end (High Side) and low (Low Side) were parallel 16 SBD, each power module is equipped with a total of 32 SBD. Mitsubishi Electric has trial out of more than 75A rated current of the SBD. Current use of the product the greater the number of components required can be less. However, according to the company, the "taking into account the practicality of using the device characteristics of disparity between the smaller 75A products."
According to Mitsubishi Electric introduced the rated current of 1200A, voltage is 1700V, the output power of 300kW-class test products inverter can drive 750V DC Overhead Line light rail. For example, in Japanese urban areas such as subway and monorail. In Japan, 1500V DC Trolley higher proportion of light rail, light rail in Europe compared to 750V more.
Mitsubishi Electric announced that future investment totaled about 13.5 billion yen of funds set up in Fukuoka city SiC power device pilot line. The idea of using the pilot line 4-inch bottom, in fact, will be used in the base plate are stacked floor extension epitaxial layer. Mitsubishi Electric said, "To mass production, at least 4-inch size." Through the pilot line for production of not only the SBD, and so there are MOSFET transistors.
